???????????????????????????????? SSF1007 ? main product characteristics: ? silikron semiconductor co.,ltd. 2011.04.02 version : 1.0 page 1of 5 www.silikron.com ? ? v dss 100v r ds (on) 5.8mohm typ i d 130a features and benefits: SSF1007 top view (to220) ? advanced trench mosfet process technology ? special designed for conver tors and power controls ? ultra low on-resistance ? 175 operating temperature ? high avalanche capability and 100% tested description: it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in pow er switching application and a wide variety of other applications. absolute max rating: symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 130 id @ tc = 100c continuous drain current, vgs @ 10v 91 idm pulsed drain current 520 a power dissipation 258 w pd @tc = 25c linear derating factor 1.7 w/ c ? vgs gate-to-source voltage 20 v eas single pulse avalanche energy @ l=0.3mh 735 mj iar avalanche current @ l=0.3mh 75 a tj tstg operating junction and st orage temperature range -55 to + 175 c thermal resistance symbol characterizes value unit r jc junction-to-case 0.58 /w r ja junction-to-ambient ( t 10s) 62 /w
???????????????????????????????? SSF1007 ? electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 100 ? ? v vgs = 0v, id = 250 a rds(on) static drain-to-source on-resistance ? 5.8 7 m ? vgs = 10v, id = 75a vgs(th) gate threshold voltage 2 ? 4 v vds = vgs, id = 250 a ? ? 20 vds = 100v, vgs = 0v idss drain-to-source leakage current ? ? 250 a vds = 80v, vgs = 0v, tj = 125c gate-to-source forward leakage ? ? 100 vgs = 20v igss gate-to-source reverse leakage ? ? -100 na vgs = -20v qg total gate charge ? 243 ? qgs gate-to-source charge ? 47 ? qgd gate-to-drain("miller") charge ? 92 ? nc id = 75a vds = 50v vgs = 10v td(on) turn-on delay time ? 28 ? tr rise time ? 108 ? td(off) turn-off delay time ? 123 ? tf fall time ? 120 ? ns vdd = 65v id = 75a rg = 2.7 ? vgs = 10v ciss input capacitance ? 8456 ? coss output capacitance ? 454 ? crss reverse transfer capacitance ? 417 ? pf vgs = 0v vds = 50v ? = 500khz source-drain ratings and characteristics parameter min. typ. max units conditions is continuous source current (body diode) ? ? 130 mosfet symbol showing the integral reverse p-n junction diode. ism pulsed source current (body diode) ? ? 520 a tj = 25c, is = 75a, vgs = 0v vsd diode forward voltage ? ? 1.3 v tj = 25c, if = 75a, vdd = 20v di/dt = 100a/ s trr reverse recovery time ? 57 70 ns qrr reverse recovery charge ? 156 170 nc tj = 25c, if = 75a,vgs=0v di/dt = 100a/ s ton forward turn-on time intrinsic turn-on ti me is negligible (turn-on is dominated by ls+ld) ? silikron semiconductor co.,ltd. 2011.04.02 version : 1.0 page 2of 5 www.silikron.com ? ?
???????????????????????????????? SSF1007 ? typical electrical and thermal characteristics ?? ? silikron semiconductor co.,ltd. 2011.04.02 version : 1.0 page 3of 5 www.silikron.com ? ? ? ??? figure 2. typical transfer characteristics figure 1. typical output characteristics figure 3.typical capacitance vs. drain-to-source voltage figure 4. normalized on-resistance vs. case temperature ?? ??????? figure 6. maximum drain current vs. case temperature figure 5. drain-to-source breakdown voltage vs. temperature ?????????????????????????????????????????????? ?
???????????????????????????????? SSF1007 ? typical electrical and thermal characteristics ? ? figure 7. maximum effective transient thermal impedance, junction-to-case ? ? switch ? waveforms ? ? silikron semiconductor co.,ltd. 2011.04.02 version : 1.0 page 4of 5 www.silikron.com ? ? notes: repetitive rating; pulse width limited b ?
???????????????????????????????? SSF1007 ? mechanical data to220 ? silikron semiconductor co.,ltd. 2011.04.02 version : 1.0 page 5of 5 www.silikron.com ? ?
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